Trap‐Assisted Memristive Switching in HfO <sub>2</sub> ‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy
نویسندگان
چکیده
Memristive devices are under intense development as non-volatile memory elements for extending the computing capabilities of traditional silicon technology by enabling novel primitives. In this respect, interface-based memristive promising candidates to emulate synaptic functionalities in neuromorphic circuits aiming replicate information processing nervous systems. A device composed Nb/NbOx/Al2O3/HfO2/Au that shows features like analog switching, no electro-forming, and high current-voltage non-linearity is reported. Synchrotron-based X-ray photoelectron spectroscopy depth-dependent hard used probe situ different resistance states thus origin switching. Spectroscopic evidence switching based on charge state electron traps within HfO2 found. Electron energy loss transmission microscopy support analysis. model proposed considers a two-terminal metal–insulator–semiconductor structure which insulator (HfO2/Al2O3) modulate space region semiconductor (NbOx) and, thereby, overall resistance. The experimental findings line with impedance data reported companion paper (Marquardt et al). Both works complement one another derive detailed model, helps engineer performance integrate into technology.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2023
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202201226